Injection current in ferroelectric group-IV monochalcogenide monolayers

Ferroelectric switch for spin injection

Spin splitting in 2D monochalcogenide semiconductors

We report ab initio calculations of the spin splitting of the uppermost valence band (UVB) and the lowermost conduction band (LCB) in bulk and atomically thin GaS, GaSe, GaTe, and InSe. These layered monochalcogenides appear in four major polytypes depending on the stacking order, except for the monoclinic GaTe. Bulk and few-layer ε-and γ -type, and odd-number β-type GaS, GaSe, and InSe crystal...

Hybrid Model for Bulk Current Injection Probe

A new hybrid-model for BCI probe is derived . This model is built based on the probe's internal structure without refinements, and by carrying out just one electrical measurement for the reflection coefficient, so that it can be generalized and used in studying the effect of layout parameters in the aim of improving the probe high frequency performance, which helps the developer in design stage...

Electric control of spin injection into a ferroelectric semiconductor.

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-fu...

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and...